* High reliability Power SO8 package, qualified to 150°C
* Optimised for 4.5V Gate drive utilising NextPower Superjunction technology
* Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads
* Ultra low Rdson and low parasitic inductance 1.3 Appl
PSMN1R6-40YLC Datasheet (229.95 KB)
PSMN1R6-40YLC
229.95 KB
Mosfet.
PSMN1R6-40YLC 22 August 2012 N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology Product data sheet 1. Product profile 1..
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