EM512D16 Datasheet PDF - NanoAmp Solutions 512K x 16-Bit Ultra-Low Power Asynchronous SRAM Specs

EM512D16 - 512K x 16-Bit Ultra-Low Power Asynchronous SRAM

Datasheet Summary

Description

Pin Name A0-A 18 WE CE1, CE2 OE UB LB I/O0-I/O 15 VCC VCCQ VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Inputs Output Enable Input Upper Byte Enable Input Lower Byte Enable Input Data Inputs/Outputs Power Power I/O pins only Ground Not Connected FIGURE 1: Typical Operating E

Features

Dual Voltage for Optimum Performance: Vccq - 2.3 to 3.6 Volts Vcc - 1.7 to 2.2 Volts.
Extended Temperature Range: -40 to +85 oC.
Fast Cycle Time: Random Access < 70 ns Page Mode < 25 ns.
Very Low Operating Current: ICC < 5 mA typical at 2V, 10 Mhz.
Very Low Standby Current: ISB < 2 uA @ 55 oC.
16 Word Fast Page-Mode Operation.
48-Pin BGA or Known Good Die available TABLE 1: Pin.

Datasheet Details

Part number	EM512D16
Manufacturer	NanoAmp Solutions
File Size	52.92 KB
Description	512K x 16-Bit Ultra-Low Power Asynchronous SRAM
Datasheet	EM512D16 Datasheet
Additional preview pages of the EM512D16 datasheet.

📁 Similar Datasheet

EM5102 - Low Dropout LDO (Excelliance MOS)

EM5102AQP - 2A Low Dropout LDO (CYStech Electronics)

EM5103 - Low Dropout LDO (Excelliance MOS)

EM5103 - 3A Low Dropout LDO (CYStech Electronics)

EM5105 - Low Dropout LDO (Excelliance MOS)

EM5106 - Low Dropout LDO (Excelliance MOS)

EM5107 - Low Dropout LDO (Excelliance MOS)

EM5109 - 3A Low Dropout LDO (Excelliance MOS)

EM513 - PLASTIC SILICON RECTIFIERS (PAN JIT)

EM513 - Sillicon Rectifier (UPM)

Full PDF Text Transcription

Click to expand full text

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM512D16 Advance Information EM512D16 512Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview The EM512D16 is an integrated memory device containing a low power 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The base design is the same as NanoAmp’s standard low voltage version, EM512W16. The device is fabricated using NanoAmp’s advanced CMOS process and high-speed/ultra low-power/ low-voltage circuit technology. The device pinout is compatible with other standard 512K x 16 SRAMs. The device is designed such that a creative user can improve system power and performance parameters through use of it’s unique page mode operation.

Published: Nov 7, 2005 |