N08T1630CXB Datasheet - NanoAmp Solutions

N08T1630CXB 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

4 A1 A4 A6 A7 A16 A15 A13 A10 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 VSS A14 A12 A9 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1 CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enab.

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08T1630CxB www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit Overview The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits. It is designed to be identical in operation and interface to standard 6T SRAMS. The device is designed for low .

N08T1630CXB Features

* Single Wide Power Supply Range 2.7 to 3.6 Volts

* Very low standby current 70µA at 3.0V (Max)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enab

N08T1630CXB_NanoAmpSolutions.pdf