N08T1630CXB Datasheet (NanoAmp Solutions) - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

N08T1630CXB, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit

4 A1 A4 A6 A7 A16 A15 A13 A10 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 VSS A14 A12 A9 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1 CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enab

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08T1630CxB www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit Overview The N08T1630CxB is an integrated memory device containing a low power 8 Mbit SRAM built using a self-refresh DRAM array organized as 512,288 words by 16 bits.

It is designed to be identical in operation and interface to standard 6T SRAMS.

The device is designed for low

N08T1630CXB Features

* Single Wide Power Supply Range 2.7 to 3.6 Volts

* Very low standby current 70µA at 3.0V (Max)

* Very low operating current 2.0mA at 3.0V and 1µs (Typical)

* Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enab