N08L163WC2A Datasheet (NanoAmp Solutions) - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

N08L163WC2A, 8Mb Ultra-Low Power Asynchronous CMOS SRAM

4 A1 A4 A6 A7 A16 A15 A13 A10 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enab

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2A www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low po

N08L163WC2A Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts

* Very low standby current 4.0µA at 3.0V (Typical)

* Very low operating current 2.0mA at 3.0V and 1µs(Typical)

* Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)

* Simple memory control Dual