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N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

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Description

N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L63W2A is an integrated memory device containing a 8 Mbit Static Ra.
6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4.

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Features

* Single Wide Power Supply Range 2.3 to 3.6 Volts
* Very low standby current 4.0µA at 3.0V (Typical)
* Very low operating current 2.0mA at 3.0V and 1µs(Typical)
* Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)
* Simple memory control Dual

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N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 16bit ON Semiconductor
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