N08L6182A Datasheet (ON Semiconductor) - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

N08L6182A, 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

3 A0 A3 A5 A17 NC A14 A12 A9 2 OE UB I/O10 I/O11 I/O12 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enab

N08L6182A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L6182A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power.

The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion.

Byte controls (UB and

N08L6182A Features

* Single Wide Power Supply Range 1.65 to 2.2 Volts

* Very low standby current 0.5µA at 1.8V (Typical)

* Very low operating current 1.0mA at 1.8V and 1µs (Typical)

* Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical)

* Simple memory control Du