N08L163WC1C Datasheet (NanoAmp Solutions) - 8Mb Ultra-Low Power Asynchronous CMOS SRAM

N08L163WC1C, 8Mb Ultra-Low Power Asynchronous CMOS SRAM

Pin Name A0-A18 WE CE OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected Stock No.

23394-B 01/05 The specifications of this device are sub

NanoAmp Solutions, Inc.

670 North McCarthy Blvd.

Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC1C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC1C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits.

The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performan

N08L163WC1C Features

* Single Wide Power Supply Range 2.2 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 1.5mA at 3.0V and 1µs(Typical)

* Simple memory control Byte control for independent byte operation Output Enable (OE) for memory expansion