N08L163WC2C Datasheet, sram equivalent, NanoAmp Solutions

N08L163WC2C Features

• Sram
• Single Wide Power Supply Range 2.2 to 3.6 Volts
• Very low standby current 2.0µA at 3.0V (Typical)
• Very low operating current 1.5mA at 3.0V and 1µs(Typical)

PDF File Details

Part number:

N08L163WC2C

Manufacturer:

NanoAmp Solutions

File Size:

269.03kb

Download:

📄 Datasheet

Description:

8mb ultra-low power asynchronous cmos sram. 3 A0 A3 A5 A17 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O

N08L163WC2C Application

• Applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of

TAGS

N08L163WC2C

NanoAmp Solutions

📁 Related Datasheet

N08L163WC2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N08L163WC2A .D.

N08L163WC1C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N08L163WC1C Advanc.

N08L1618C2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N08L1618C2A Advanc.

N08L083WC2C - 8Mb Ultra-Low Power Asynchronous CMOS SRAM (NanoAmp Solutions)
NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 .nanoamp. N08L083WC2C Advanc.

N08L6182A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit (ON Semiconductor)
N08L6182A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L6182A is an integrated memory device containing a 8 Mbit Static Ran.

N08L63W2A - 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit (ON Semiconductor)
N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L63W2A is an integrated memory device containing a 8 Mbit Static Ra.

N0800S - NPN SILICON EPITAXIAL TRANSISTOR (Renesas)
.

N080ICE-GB0 - LCD (INNOLUX)
PRODUCT SPECIFICATION Doc. Number: DN0383720 □ Tentative Specification □ Preliminary Specification ■ Approval Specification MODEL NO.: N080ICE SUFFIX:.

N080ICE-GB1 - LCD MODULE (INNOLUX)
3.2 TFT-LCD Confidential N080ICE-GB1 23040356 approval Level ： Specification Internal Disclosed LCD MODULE SPECIFICATION Module Size： 8.0’’ 800.

N0882NC400 - Phase Control Thyristor (WESTCODE)
WESTCODE Date:- 18 Dec, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0882NC400 to N0882NC450 Absolute Maximum Ratings VDRM VDSM VRRM V.