N08L163WC2C Datasheet - NanoAmp Solutions

N08L163WC2C 8Mb Ultra-Low Power Asynchronous CMOS SRAM

3 A0 A3 A5 A17 2 OE UB I/O10 I/O11 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte .

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2C Advance Information www.DataSheet4U.com 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2C is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performan.

N08L163WC2C Features

* Single Wide Power Supply Range 2.2 to 3.6 Volts

* Very low standby current 2.0µA at 3.0V (Typical)

* Very low operating current 1.5mA at 3.0V and 1µs(Typical)

* Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output

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