NT5DS4M32EG Datasheet - NanoAmp Solutions

NT5DS4M32EG 1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM

CK, /CK CKE /CS /RAS /CAS /WE DQS DM RFU Differential Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Data Strobe Data Mask Reserved for Future Use BA0, BA1 A0 ~ A11 DQ0 ~ DQ31 VDD VSS VDDQ VSSQ MCL Bank Select Address Address Input Data Input/Output Power .

NT5DS4M32EG Features

* with Data Strobe allow extremely high performance up to 400Mbps/pin. I/O transactions are possible on both edges of the clock. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applicatio

NT5DS4M32EG Datasheet (1.05 MB)