NT5DS4M32EG - 1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM

NanoAmp Solutions

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Datasheet Details

Part number	NT5DS4M32EG
Manufacturer	NanoAmp Solutions
File Size	1.05 MB
Description	1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM
Datasheet	NT5DS4M32EG_NanoAmpSolutions.pdf

NT5DS4M32EG Product details

Description

CK, /CK CKE /CS /RAS /CAS /WE DQS DM RFU Differential Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Data Strobe Data Mask Reserved for Future Use BA0, BA1 A0 ~ A11 DQ0 ~ DQ31 VDD VSS VDDQ VSSQ MCL Bank Select Address Address Input Data Input/Output Power Ground Power for DQ’s Ground for DQ’s NC Doc # 14-02-045 Rev A ECN 01-1118 The specifications of this device are subject to change without notice.For latest documentation see http://www.nanoamp.com.

Features

with Data Strobe allow extremely high performance up to 400Mbps/pin. I/O transactions are possible on both edges of the clock. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system.

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