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NT5DS128M4CS Datasheet - Nanya Techology

NT5DS128M4CS 512Mb DDR SDRAM

Die C of 512Mb SDRAM devices based using DDR interface. They are all based on Nanya’s 90 nm design process. The 512Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 536,870,912 bits. It is internally configured as a quad-bank DRAM. The 512Mb DDR SDRAM uses a double-data-rate.

NT5DS128M4CS Features

* DDR 512M bit, Die C, based on 90nm design rules

* Double data rate architecture: two data transfers per clock cycle

* Bidirectional data strobe (DQS) is transmitted and received with data, to be used in capturing data at the receiver

* DQS is edge-aligned with data

NT5DS128M4CS Datasheet (2.15 MB)

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Datasheet Details

Part number:

NT5DS128M4CS

Manufacturer:

Nanya Techology

File Size:

2.15 MB

Description:

512mb ddr sdram.

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NT5DS128M4CS 512Mb DDR SDRAM Nanya Techology

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