11ES4

Low Forward Voltage Drop Diode

Nihon Inter Electronics

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11ES4 Datasheet (20.70 KB)

11ES4 Datasheet Preview — Preview of 11ES4 PDF

Datasheet Details

Part number:

11ES4

Manufacturer:

Nihon Inter Electronics

File Size:

20.70 KB

Description:

Low forward voltage drop diode.

11ES4 Features

* Miniature Size

* Low Forward Voltage drop

* Low Reverse Leakage Current

* High Surge Capability

* 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse V

📁 Related Datasheet

11ES1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11ES1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11ES1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11ES1 - 11ES2 SILICON RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge curr.

11ES2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11ES2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11ES2 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11ES1 - 11ES2 SILICON RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge curr.

11E1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

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11ES4 Low Forward Voltage Drop Diode Nihon Inter Electronics

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