11ES4 Datasheet, Diode, Nihon Inter Electronics

✔ 11ES4 Features

PDF File Details

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Nihon Inter Electronics manufacturer logo

Part number:

11ES4

Manufacturer:

Nihon Inter Electronics

File Size:

20.70kb

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📄 Datasheet

Description:

Low forward voltage drop diode.

Datasheet Preview: 11ES4 📥 Download PDF (20.70kb)
Page 2 of 11ES4

TAGS

11ES4
Low
Forward
Voltage
Drop
Diode
Nihon Inter Electronics

📁 Related Datasheet

11ES1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11ES1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11ES1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11ES1 - 11ES2 SILICON RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge curr.

11ES2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11ES2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11ES2 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11ES1 - 11ES2 SILICON RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge curr.

11E1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E2 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E4 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E6 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

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