11E2 Datasheet, Diode, Nihon Inter Electronics

11E2 Features

  • Diode
  • Miniature Size
  • Low Forward Voltage drop
  • Low Reverse Leakage Current
  • High Surge Capability
  • 26mm and 52mm Inside Tape Spacing Package Ava

PDF File Details

Part number:

11E2

Manufacturer:

Nihon Inter Electronics

File Size:

20.03kb

Download:

📄 Datasheet

Description:

Diode.

Datasheet Preview: 11E2 📥 Download PDF (20.03kb)
Page 2 of 11E2

TAGS

11E2
DIODE
Nihon Inter Electronics

📁 Related Datasheet

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11E4 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

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.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

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11EFS4 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
FRD Type : 11EFS4 FEATURES * Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.

11EQ04 - Schottky Barrier Diode (Nihon Inter Electronics)
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11EQ06 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
SBD Type :11EQ06 OFUETLAITNUERDERSAWING * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Vol.

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Stock and price

part
Advanced Thermal Solutions Inc
HEATSINK 50X50X10MM XCUT T766
DigiKey
ATS-11E-200-C2-R0
25 In Stock
Qty : 950 units
Unit Price : $4.06
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