11ES1
EIC
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Silicon rectifier diodes.
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📁 Related Datasheet
11ES1 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11ES1
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.
11ES2 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11ES2
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.
11ES2 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11ES1 - 11ES2
SILICON RECTIFIER DIODES
PRV : 100 - 200 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability * High surge curr.
11ES4 - Low Forward Voltage Drop Diode
(Nihon Inter Electronics)
DIODE Type : 11ES4
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.
11E1 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11E1
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.
11E1 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E2 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11E2
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.
11E2 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E4 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E6 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.