11EFS4 Datasheet, Diode, Nihon Inter Electronics

11EFS4 Features

• Diode
• Miniature Size
• Ultra-Fast Recovery
• Low Forward Voltage Drop
• Low Power Loss, High Efficiency
• High Surge Capability
• 200 Volts t

PDF File Details

Part number:

11EFS4

Manufacturer:

Nihon Inter Electronics

File Size:

34.07kb

Download:

📄 Datasheet

Description:

Low forward voltage drop diode.

TAGS

11EFS4

Nihon Inter Electronics

📁 Related Datasheet

11EFS2 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
FRD Type : 11EFS2 FEATURES * Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.

11E1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E2 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E4 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E6 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11EQ04 - Schottky Barrier Diode (Nihon Inter Electronics)
SBD Type :11EQ04 OFUETLAITNUERDERSAWING * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Vol.

11EQ06 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
SBD Type :11EQ06 OFUETLAITNUERDERSAWING * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Vol.

11EQ09 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
SBD Type :11EQ09 FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Vo.