11ES2 Datasheet, Diodes, EIC

11ES2 Features

• Diodes :
• High current capability
• High surge current capability
• High reliability
• Low reverse current
• Low forward voltage drop
• Pb / Ro

PDF File Details

Part number:

11ES2

Manufacturer:

EIC

File Size:

27.16kb

Download:

📄 Datasheet

Description:

Silicon rectifier diodes.

TAGS

11ES2

EIC

📁 Related Datasheet

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DIODE Type : 11ES1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11ES1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11ES1 - 11ES2 SILICON RECTIFIER DIODES PRV : 100 - 200 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge curr.

11ES2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11ES2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11ES4 - Low Forward Voltage Drop Diode (Nihon Inter Electronics)
DIODE Type : 11ES4 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside T.

11E1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E2 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E4 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E6 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.