| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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KYOCERA Corporation | 11EFS2 | Diode Switching 200V 1A 2-Pin DO-41S Bulk | Verical | 13627 | 10000 units |
$0.11
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🛒 Buy Now |
11EFS2
Nihon Inter Electronics
23.76 KB
Low forward voltage drop diode.
FRD Type : 11EFS2
FEATURES
* Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low P.
ower Loss, High Efficiency * High Surge Capability * 200 Volts through 400 Volts Types Available * 2.
📁 Related Datasheet
11EFS4 - Low Forward Voltage drop Diode
(Nihon Inter Electronics)
FRD Type : 11EFS4
FEATURES
* Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.
11E1 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11E1
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.
11E1 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E2 - DIODE
(Nihon Inter Electronics)
DIODE Type : 11E2
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.
11E2 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
11E4 - SILICON RECTIFIER DIODES
(EIC)
.eicsemi.
11E1 - 11E6
PRV : 100 - 600 Volts Io : 1.0 Ampere
FEATURES :
* High current capability * High surge current capability * High reliabi.
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Kyocera AVX Components
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| 11EFS2 |
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Diode: rectifying; THT; 200V; 1A; Ifsm: 30A; DO41; Ufmax: 0.98V; 30ns
|
| TME |
| 0 In Stock |
| Qty : 4000 units |
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Unit Price : $0.24
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KYOCERA Corporation
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| 11EFS2 |
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Semiconductors
|
| Chip One Stop |
| 13627 In Stock |
| Qty : 20000 units |
|
Unit Price : $0.09
|
| 🛒 Buy Now |
