11E6 Datasheet, Diodes, EIC

11E6 Features

  • Diodes :
  • High current capability
  • High surge current capability
  • High reliability
  • Low reverse current
  • Low forward voltage drop
  • Pb / Ro

PDF File Details

Part number:

11E6

Manufacturer:

EIC

File Size:

28.06kb

Download:

📄 Datasheet

Description:

Silicon rectifier diodes.

Datasheet Preview: 11E6 📥 Download PDF (28.06kb)
Page 2 of 11E6

TAGS

11E6
SILICON
RECTIFIER
DIODES
EIC

📁 Related Datasheet

11E1 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E1 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E1 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E2 - DIODE (Nihon Inter Electronics)
DIODE Type : 11E2 FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Ta.

11E2 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11E4 - SILICON RECTIFIER DIODES (EIC)
.eicsemi. 11E1 - 11E6 PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * High current capability * High surge current capability * High reliabi.

11EFS2 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
FRD Type : 11EFS2 FEATURES * Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.

11EFS4 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
FRD Type : 11EFS4 FEATURES * Miniature Size * Ultra-Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability.

11EQ04 - Schottky Barrier Diode (Nihon Inter Electronics)
SBD Type :11EQ04 OFUETLAITNUERDERSAWING * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Vol.

11EQ06 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
SBD Type :11EQ06 OFUETLAITNUERDERSAWING * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Vol.

11EQ09 - Low Forward Voltage drop Diode (Nihon Inter Electronics)
SBD Type :11EQ09 FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Vo.

Stock and price

TE Connectivity
SWITCH PUSHBUTTON SPDT 3A 250V
DigiKey
AV2211E624Q04
86 In Stock
Qty : 500 units
Unit Price : $14.41
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