2N7002, GME
Production specification
N-Channel Enhancement Mode Field Effect Transistor 2N7002
FEATURES
High Density Cell Design For Low
Pb
RDS(ON).
Lead-.
2N7002, Microchip
2N7002
N-Channel Enhancement-Mode Vertical DMOS FET
Features
• Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • L.
2N7002, ST Microelectronics
2N7000 2N7002
N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on) max ID
2N7000
)2N7002
60 V 60 V
.
2N7002, Central Semiconductor
2N7002
SURFACE MOUNT SILICON N-CHANNEL
ENHANCEMENT-MODE MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 typ.
