2SA2012 - Bipolar Transistor

Product Overview

ON Semiconductor

Part number	2SA2012
Manufacturer	ON Semiconductor
File Size	293.97 KB
Description	Bipolar Transistor
Datasheet	2SA2012 Datasheet
Additional preview pages of the 2SA2012 datasheet.

Adoption of MBIT processes.
Large current capacity.
Low collector to emitter saturation voltage.
Ultrasmall-sized package permitting applied sets to be made small and slim.
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Conditions Ratings Unit.

📁 Similar Datasheet

2SA201 - PNP transistor (ETC)
2SA2010 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA2011 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2013 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2014 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2015 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2016 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SA2017 - Power Transistor (ROHM)

Other Datasheets by ON Semiconductor

Published: Dec 16, 2021 |