2SA2016 - PNP/NPN Epitaxial Planar Silicon Transistors

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Sanyo Semicon Device

Part number	2SA2016
Manufacturer	Sanyo Semicon Device
File Size	50.27 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA2016 Datasheet
Additional preview pages of the 2SA2016 datasheet.

Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitales miniaturization in end products.
High allowable power dissipation. 3 0.5 0.4 1.5 3.0 0.75 2 1 0.4 1.0 2.5 4.25max Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector.

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Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |