* Adoption of MBIT processes.
* Large current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* High allowable power dissipation. Package Dimensions unit:mm 2041A [2SA2022/2SC5610] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 Specifications ( )
2SA2022
Sanyo Semicon Device
49.47 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN6367
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2022/2SC5610
DC/DC Converter Applications
Applications
* Relay drivers, .
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2SA2027 - SILICON EPITAXIAL TRANSISTOR
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ISAHAYA ELECTRONICS CORPORATION
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2SA2029 - General Purpose Transistor
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