2SA2013 Datasheet - Sanyo Semicon Device

2SA2013 - PNP/NPN Epitaxial Planar Silicon Transistors

2SA2013 Features

* Adoption of FBET and MBIT processes.

* High current capacitance.

* Low collector-to-emitter saturation voltage.

* High-speed switching.

* Ultrasmall package facilitates miniaturization in end products.

* High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2

Datasheet Details

2SA2013

Sanyo Semicon Device

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Pnp/npn epitaxial planar silicon transistors.

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