2SA2013 - PNP/NPN Epitaxial Planar Silicon Transistors

Product Overview

Sanyo Semicon Device

Part number	2SA2013
Manufacturer	Sanyo Semicon Device
File Size	50.18 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SA2013 Datasheet
Additional preview pages of the 2SA2013 datasheet.

Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products.
High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications ( ) : 2SA2013 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector.

📁 Similar Datasheet

2SA201 - PNP transistor (ETC)
2SA2010 - Silicon PNP epitaxial planer type Transistor (Panasonic Semiconductor)
2SA2017 - Power Transistor (ROHM)
2SA2018 - LOW FREQUENCY TRANSISTOR (GME)
2SA2018F - PNP Transistor (SeCoS)
2SA2018F-C - PNP Transistor (SeCoS)
2SA2002 - Silicon PNP Epitaxial Type Transistor (IDC)
2SA2004 - Silicon PNP Transistor (Panasonic Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |