2SA2012 Datasheet - Sanyo Semicon Device

2SA2012 PNP/NPN Epitaxial Planar Silicon Transistors

2SA2012 Features

* Adoption of MBIT processes.

* Large current capacitance.

* Low collector-to-emitter saturation voltage.

* Ultrasmall-sized package permitting applied sets to be made small and slim.

* High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifi

Datasheet Details

2SA2012

Sanyo Semicon Device

49.57 KB

Pnp/npn epitaxial planar silicon transistors.

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