* φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO
2SA2004
Panasonic Semiconductor
34.49 KB
Silicon pnp transistor.
Power Transistors
2SA2004
Silicon PNP epitaxial planer type
Unit: mm
For power amplification
9.9±0.3
4.6±0.2 2.9±0.2
13.7±0.2 4.2±0.2 Solder Dip
.
📁 Related Datasheet
2SA2002 - Silicon PNP Epitaxial Type Transistor
(IDC)
ÉVÉäÉRÉì PNPÉGÉsÉ^ÉLÉVÉ@Éãå`ÅiÉtÉåÅ|ÉÄÉ^ÉCÉvÅj
äTÅ@óv 2SA2002ÇÕÅAé˜éâïïé~å`ÉVÉäÉRÉì PNPÉGÉsÉ^ÉLÉVÉ@Éãå` ÉgÉâÉìÉWÉXÉ^Ç≈Ç∑ÅB∫⁄∏¿ìdó¨Ç™ëÂÇ´Ç≠ VCE(sat)Ç™è.
2SA2004 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SA2004
DESCRIPTION ·Silicon PNP epitaxial planner type ·100% avalanche tested ·Minimum Lot-.
2SA2005 - Transistors
(Rohm)
..
2SA2005
Transistors
For Audio Amplifier output - TV Velosity Modulation ( 160V, 1.5A)
2SA2005
Structure PNP Silicon Epitaxial Pl.
2SA2006 - High-speed Switching Transistor
(ROHM)
Transistors
2SA1952 / 2SA1906 / 2SA2006
High-speed Switching Transistor (−60V, −5A)
2SA1952 / 2SA1906 / 2SA2006
Features
1) High speed switching. .
2SA2009 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SA2009
Silicon PNP epitaxial planer type
Unit: mm
(0.425)
For low-frequency high breakdown voltage amplification I Features
• High coll.
2SA201 - PNP transistor
(ETC)
..
.
2SA2010 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SA2010
Silicon PNP epitaxial planer type
Unit: mm
For DC-DC converter For various driver circuits I Features
• Low collector to emitter.
2SA2011 - PNP/NPN Epitaxial Planar Silicon Transistors
(Sanyo Semicon Device)
Ordering number:ENN6305
PNP/NPN Epitaxial Planar Silicon Transistors
2SA2011/2SC5564
DC/DC Converter Applications
Applications
· Relay drivers, lamp.
