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2SA2004 - Silicon PNP Transistor

Datasheet Summary

Features

  • φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating.
  • 60.
  • 60.
  • 5.
  • 16.
  • 8 20 2.0 150.
  • 55 to +150 °C °C Unit V V V A A W 0.55±0.15 2.54±0.30 5.08±0.50 1 2 3 1: Base 2: Collector 3: Emitter.

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Datasheet Details

Part number 2SA2004
Manufacturer Panasonic Semiconductor
File Size 34.49 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA2004 Datasheet
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Full PDF Text Transcription

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Power Transistors 2SA2004 Silicon PNP epitaxial planer type Unit: mm For power amplification 9.9±0.3 4.6±0.2 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High-speed switching 15.0±0.5 I Features φ 3.2±0.1 1.4±0.2 1.6±0.2 0.8±0.1 3.0±0.5 2.6±0.1 I Absolute Maximum Ratings TC = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating −60 −60 −5 −16 −8 20 2.0 150 −55 to +150 °C °C Unit V V V A A W 0.55±0.15 2.54±0.30 5.08±0.
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