2SA2009 Silicon PNP epitaxial planer type Transistor

Panasonic Semiconductor

Description

Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification I .

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Datasheet Specifications

Part number: 2SA2009
Manufacturer: Panasonic Semiconductor
File Size: 43.81 KB
Datasheet: 2SA2009_PanasonicSemiconductor.pdf
Description: Silicon PNP epitaxial planer type Transistor

Features

* High collector to emitter voltage VCEO
* Low noise voltage NV 0.3+0.1
* 0.0 3 0.15+0.10
* 0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base

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2SA2009 Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor

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