Datasheet4U Logo Datasheet4U.com

2SA2009 - Silicon PNP epitaxial planer type Transistor

Datasheet Summary

Features

  • High collector to emitter voltage VCEO.
  • Low noise voltage NV 0.3+0.1.
  • 0.0 3 0.15+0.10.
  • 0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating.
  • 120.
  • 120.

📥 Download Datasheet

Datasheet preview – 2SA2009

Datasheet Details

Part number 2SA2009
Manufacturer Panasonic Semiconductor
File Size 43.81 KB
Description Silicon PNP epitaxial planer type Transistor
Datasheet download datasheet 2SA2009 Datasheet
Additional preview pages of the 2SA2009 datasheet.

📁 Similar Datasheet

  • 2SA2002 - Silicon PNP Epitaxial Type Transistor (IDC)
  • 2SA2004 - PNP Transistor (INCHANGE)
  • 2SA2005 - Transistors (Rohm)
  • 2SA2006 - High-speed Switching Transistor (ROHM)
  • 2SA201 - PNP transistor (ETC)
  • 2SA2011 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA2012 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA2012 - Bipolar Transistor (ON Semiconductor)
  • 2SA2013 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SA2014 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
Other Datasheets by Panasonic Semiconductor
  • 2SA2004 - Silicon PNP Transistor
  • 2SA2010 - Silicon PNP epitaxial planer type Transistor
  • 2SA2021 - Silicon PNP epitaxial planer type Transistor
  • 2SA2028 - Silicon PNP epitaxial planer type Transistor
  • 2SA2057 - Silicon PNP Transistor
  • 2SA2064 - Silicon PNP Transistor
  • 2SA2067 - Silicon PNP Transistor
  • 2SA2084 - Silicon PNP Transistor

Full PDF Text Transcription

Click to expand full text
Transistors 2SA2009 Silicon PNP epitaxial planer type Unit: mm (0.425) For low-frequency high breakdown voltage amplification I Features • High collector to emitter voltage VCEO • Low noise voltage NV 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 (0.65) (0.65) I Absolute Maximum Ratings Ta = 25°C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −120 −120 −5 −50 −20 150 150 −55 to +150 Unit V V V mA mA mW °C °C 10˚ 1.3±0.1 2.0±0.
Published: |