2SA2016 Datasheet - ON Semiconductor

2SA2016 Bipolar Transistor

2SA2016 Features

* Adoption of FBET and MBIT processes

* Large current capacity

* Low collector-to-emitter saturation voltage

* High-speed switching

* Ultrasmall package facilitales miniaturization in end products

* High allowable power dissipation ( )2SA2016 Sp

Datasheet Details

2SA2016

232.23 KB

Bipolar transistor.

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2SA2016 Bipolar Transistor ON Semiconductor

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