2SC3645 - PNP / NPN Epitaxial Planar Silicon Transistors

Product Overview

ON Semiconductor

Part number	2SC3645
Manufacturer	ON Semiconductor
File Size	93.20 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3645 Datasheet
Additional preview pages of the 2SC3645 datasheet.

Adoption of FBET process.
High breakdown voltage (VCEO=160V).
Excellent linearity of hFE and small Cob.
Fast switching speed.
Ultrasmall size marking it easy to provide high-density,small-sized hybrid ICs. Specifications ( ) : 2SA1415 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature S.

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Published: Jan 24, 2016 |