* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operation
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
* 100% of the Parts Tested for ILM (Note 2)
* Hig
AFGHL50T65RQDN Datasheet (239.21 KB)
AFGHL50T65RQDN
239.21 KB
Igbt.
IGBT for Automotive Application 650 V, 50 A AFGHL50T65RQDN Using novel field stop IGBT technology, onsemi’s new series of field stop 4th generation IG.
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