AFGHL50T65RQDN Datasheet - ON Semiconductor

AFGHL50T65RQDN IGBT

AFGHL50T65RQDN Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operation

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A

* 100% of the Parts Tested for ILM (Note 2)

* Hig

Datasheet Details

AFGHL50T65RQDN

239.21 KB

Igbt.

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