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AFGHL50T65SQDC Hybrid IGBT

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Description

Hybrid IGBT, 50 A, 650 V AFGHL50T65SQDC Using the novel field stop 4th generation IGBT technology and the 1.5th generation SiC Schottky Diode technol.

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Features

* AEC
* Q101 Qualified
* Maximum Junction Temperature : TJ = 175C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @IC = 50 A
* Fast Switching
* Tighten Parameter Dis

AFGHL50T65SQDC Distributors

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