* AEC
* Q101 Qualified
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
* 100% of the Parts
AFGHL50T65SQ Datasheet (238.62 KB)
AFGHL50T65SQ
238.62 KB
Igbt.
Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQ Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 .
📁 Related Datasheet
AFGHL50T65SQD IGBT (ON Semiconductor)
AFGHL50T65SQDC Hybrid IGBT (ON Semiconductor)
AFGHL50T65RQDN IGBT (ON Semiconductor)
AFGHL25T120RHD IGBT (ON Semiconductor)
AFGHL25T120RLD IGBT (ON Semiconductor)
AFGHL30T65RQDN IGBT (ON Semiconductor)
AFGHL40T120RHD IGBT (ON Semiconductor)
AFGHL40T65RQDN IGBT (ON Semiconductor)
AFGHL40T65SPD IGBT (ON Semiconductor)
AFGHL40T65SQ IGBT (ON Semiconductor)
