AFGHL50T65SQD IGBT

ON Semiconductor

Description

Field Stop Trench IGBT 50 A, 650 V AFGHL50T65SQD Using the novel field stop 4th generation high speed IGBT technology.AFGHL50T65SQD which is AEC Q10.

📥 Download Datasheet

AFGHL50T65SQD Datasheet Preview — Preview of AFGHL50T65SQD PDF

Datasheet Specifications

Part number: AFGHL50T65SQD
Manufacturer: ON Semiconductor ↗
File Size: 334.82 KB
Datasheet: AFGHL50T65SQD-ONSemiconductor.pdf
Description: IGBT

Features

* AEC
* Q101 Qualified
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 50 A
* 100% of the Parts

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters
* Totem Pole Bridgeless PFC
* PTC MAXIMUM RATINGS Rating Symbol Value Unit Collector
* to
* Emitter Voltage Gate
* to
* Emitter Voltage Transi

AFGHL50T65SQD Distributors

📁 Related Datasheet

AFGBG70T65SQ

📌 All Tags

AFGHL50T65SQD IGBT ON Semiconductor

ON Semiconductor AFGHL50T65SQD-like datasheet