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ATP113 P-Channel Power MOSFET

ATP113 Description

MOSFET * Power, P-Channel, Single ATPAK -60 V, -35 A, 29.5 mW ATP113 .

ATP113 Features

* ON
* Resistance RDS(on)1 = 22.5 mW (typ)
* 4 V Drive
* Protection Diode in
* Input Capacitance Ciss = 2400 pF (typ)
* This Device is a Pb
* Free and Halogen Free ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) (Note 1) Parameter Symbol Conditions Value U

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