ATP114 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=12mΩ(typ. ).
4V drive.
Protection diode in.
Input Capacitance Ciss=4000pF(typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.

📁 ATP114 Similar Datasheet

ATP102 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP103 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
ATP107 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications (Sanyo Semicon Device)
ATP154-1 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP-SM - Standard Crystals (CTS Corporation)
ATP0574-1 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP0644-3 - SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL (AZ Displays)
ATP201 - N-Channel Silicon MOSFET (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

Published: Aug 23, 2015 |