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PNP Epitaxial Silicon Transistor
BC327
Features
Switching and Amplifier Applications Suitable for AF−Driver Stages and Low−Power Output Stages Complement to BC337/BC338 These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted.)
Symbol
Parameter
Value
Unit
VCES Collector−Emitter Voltage
−50
V
VCEO Collector−Emitter Voltage
−45
V
VEBO Emitter−Base Voltage
−5
V
IC
Collector Current (DC)
−800
mA
TJ
Junction Temperature
150
C
TSTG Storage Temperature
−55 to +150
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BC327 Datasheet
