• Part: BDW42G
  • Description: Darlington Complementary Silicon Power Transistors
  • Category: Transistor
  • Manufacturer: onsemi
  • Size: 82.39 KB
Download BDW42G Datasheet PDF
onsemi
BDW42G
Features - High DC Current Gain - h FE = 2500 (typ) @ IC = 5.0 Adc. - Collector Emitter Sustaining Voltage @ 30 m Adc: VCEO(sus) = 80 Vdc (min) - BDW46 100 Vdc (min) - BDW42/BDW47 - Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc - Monolithic Construction with Built- In Base Emitter Shunt resistors - TO- 220 pact Package - These Devices are Pb- Free and are Ro HS pliant- MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BDW46 BDW42, BDW47 Collector-Base Voltage BDW46 BDW42, BDW47 Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature...