BS270 N-Channel Enhancement Mode Field Effect Transistor

ON Semiconductor

Description

BS270 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: BS270
Manufacturer: ON Semiconductor ↗
File Size: 464.30 KB
Datasheet: BS270-ONSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D Absolute Maximum Ratings Symbol Param

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BS270 N-Channel Enhancement Mode Field Effect Transistor ON Semiconductor

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