Datasheet4U Logo Datasheet4U.com

BS270 N-Channel Enhancement Mode Field Effect Transistor

BS270 Description

BS270 N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.

BS270 Features

* 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D Absolute Maximum Ratings Symbol Param

📥 Download Datasheet

Preview of BS270 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BS200 - Water Bath Instruction Manual (Yamato)
  • BS204 - S-Band TR Tube (EEV)
  • BS208 - P-channel enhancement mode vertical D-MOS transistor (NXP)
  • BS209 - DMOS Transistors (P-Channel) (General Semiconductor)
  • BS2100F - 600V High voltage High & Low-side / Gate Driver (ROHM)
  • BS2101F - 600V High voltage High & Low-side / Gate Driver (ROHM)
  • BS2103F - 600V High voltage High & Low-side / Gate Driver (ROHM)
  • BS2114F - 600V High voltage High & Low-side Gate Driver (ROHM)

📌 All Tags

N-Channel Enhancement Mode Field Effect Transistor ON Semiconductor
ON Semiconductor BS270-like datasheet