BS2101F - 600V High voltage High & Low-side / Gate Driver

Datasheet Summary

Description

The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation.

The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V.

Features

Floating Channels for Bootstrap Operation to +600V.
Gate drive supply range f.

ROHM

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Datasheet Details

Part number	BS2101F
Manufacturer	ROHM
File Size	865.33 KB
Description	600V High voltage High & Low-side / Gate Driver
Datasheet	BS2101F Datasheet
Additional preview pages of the BS2101F datasheet.

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Full PDF Text Transcription

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600V High voltage High & Low-side, Gate Driver BS2101F General Description The BS2101F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. The Under Voltage Lockout (UVLO) circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

Published: Nov 19, 2016 |