BS2100F

600V High voltage High & Low-side / Gate Driver

ROHM

BS2100F Features

* Floating Channels for Bootstrap Operation to +600V

* Gate drive supply range from 10V to 18V

* Built-in Under Voltage Lockout for Both Channels

* 3.3V and 5.0V Input Logic Compatible

* Matched Propagation Delay for Both Channels

* Output in phase with input Applications

BS2100F General Description

The BS2100F is a monolithic high and low side gate drive IC, which can drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can b.

BS2100F Datasheet (812.97 KB)