ECH8667 - -30V -5.5A P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=30mΩ(typ. ).
4V drive.
Halogen free compliance.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When m.

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Published: Aug 26, 2025 |