FCHD190N65S3R0

N-Channel MOSFET

ON Semiconductor

FCHD190N65S3R0 Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 159 mW

* Ultra Low Gate Charge (Typ. Qg = 33 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 300 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free, Halogen Free/BFR Free and are RoHS Complia

FCHD190N65S3R0 General Description

SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switc.

FCHD190N65S3R0 Datasheet (320.44 KB)

FCHD190N65S3R0 Datasheet Preview — Preview of FCHD190N65S3R0 PDF

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FCHD190N65S3R0

Manufacturer:

ON Semiconductor ↗

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320.44 KB

Description:

N-channel mosfet.

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FCHD190N65S3R0 N-Channel MOSFET ON Semiconductor

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FCHD190N65S3R0 Features

FCHD190N65S3R0 General Description

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