FDB33N25 Datasheet - ON Semiconductor

N-Channel MOSFET

FDB33N25 Features

* RDS(on) = 94 mW (Max.) @ VGS = 10 V, ID = 16.5 A

* Low Gate Charge (Typ. 36.8 nC)

* Low Crss (Typ. 39 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

* PDP TV

* Lighting

* Uninterrup

FDB33N25 General Description

UniFETt MOSFET is onsemi’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on *state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power conver.

FDB33N25 Datasheet (253.60 KB)