FDMA86108LZ

N-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 243 mW at VGS = 10 V, ID = 2.2 A

* Max rDS(on) = 366 mW at VGS = 4.5 V, ID = 1.8 A

* Low Profile

* 0.8 mm Maximum in the New Package MicroFETt 2 x 2 mm

* Free from Halogenated Compounds and Antimony Oxides

* This Device is Pb

* Fr

FDMA86108LZ

270.26 KB

N-channel mosfet.

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FDMA86108LZ N-Channel MOSFET ON Semiconductor

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