FDMB3800N Datasheet - ON Semiconductor

FDMB3800N Dual N-Channel MOSFET

These N *Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on *state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applic.

FDMB3800N Features

* Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A

* Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A

* Fast Switching Speed

* Low Gate Charge

* High Performance Trench Technology for Extremely Low rDS(on)

* High Power and Current Handling Capability

FDMB3800N Datasheet (210.51 KB)