FDMB3800N - Dual N-Channel MOSFET

ON Semiconductor

FDMB3800N Datasheet Preview — Preview of FDMB3800N PDF

Datasheet Details

Part number	FDMB3800N
Manufacturer	ON Semiconductor ↗
File Size	210.51 KB
Description	Dual N-Channel MOSFET
Datasheet	FDMB3800N-ONSemiconductor.pdf

FDMB3800N Product details

Description

These N Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain superior switching performance. line power loss and fast switching are required.

Features

Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A.
Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A.
Fast Switching Speed.
Low Gate Charge.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability.
This Device is Pb.
Free, Halide Free and is RoHS Compliant MOSFET.

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Published: Dec 19, 2023 |