FDMB3800N Dual N-Channel MOSFET

ON Semiconductor

Description

MOSFET * Dual, N-Channel, POWERTRENCH) 30 V, 4.8 A, 40 mW FDMB3800N General .
These N. Channel Logic Level MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the.

📥 Download Datasheet

FDMB3800N Datasheet Preview — Preview of FDMB3800N PDF

Datasheet Specifications

Part number: FDMB3800N
Manufacturer: ON Semiconductor ↗
File Size: 210.51 KB
Datasheet: FDMB3800N-ONSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Max rDS(on) = 40 mW at VGS = 10 V, ID = 4.8 A
* Max rDS(on) = 51 mW at VGS = 4.5 V, ID = 4.3 A
* Fast Switching Speed
* Low Gate Charge
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability

Applications

* where low in

FDMB3800N Distributors

📁 Related Datasheet

FDMB3900AN FDMB2307NZ FDMB2308PZ FDMB506P FDMB668P FDM-2B

📌 All Tags

FDMB3800N Dual N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMB3800N-like datasheet