FDMQ8203 Dual N-Channel and Dual P-Channel Power MOSFET

ON Semiconductor

Description

MOSFET * Dual N-Channel and Dual P-Channel, POWERTRENCH), GreenBridgetSeries of High-Efficiency Bridge Rectifiers N-Channel: 100 V, 6 A, 110 m.
This quad mosfet solution provides ten. fold improvement in power dissipation over diode bridge. Q1/Q4: N. Channel.

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Datasheet Specifications

Part number: FDMQ8203
Manufacturer: ON Semiconductor ↗
File Size: 293.87 KB
Datasheet: FDMQ8203-ONSemiconductor.pdf
Description: Dual N-Channel and Dual P-Channel Power MOSFET

Features

* Q1/Q4: N
* Channel
* Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Q2/Q3: P
* Channel
* Max RDS(on) = 190 mΩ at VGS =
* 10 V, ID =
* 2.3 A
* Max RDS(on) = 235 mΩ at VGS =

Applications

* High
* Efficiency Bridge Rectifiers
* Substantial Efficiency Benefit in PD Solutions
* These Device is Pb
* Free, Halide Free and is RoHS Compliant DATA SHEET www. onsemi. com Top Bottom Pin 1 G4 S4 S4 G3 S3 S3 D3/ D1/ D4 D2 D3/ D1/ D4 D2 G1 S1 S1 G2 S2 S2

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FDMQ8203 Dual N-Channel and Dual P-Channel Power MOSFET ON Semiconductor

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