* Q1/Q4: N
* Channel
* Max RDS(on) = 110 mΩ at VGS = 10 V, ID = 3 A
* Max RDS(on) = 175 mΩ at VGS = 6 V, ID = 2.4 A
* Q2/Q3: P
* Channel
* Max RDS(on) = 190 mΩ at VGS =
* 10 V, ID =
* 2.3 A
* Max RDS(on) = 235 mΩ at VGS =
FDMQ8203 Datasheet (293.87 KB)
FDMQ8203
293.87 KB
Dual n-channel and dual p-channel power mosfet.
MOSFET
* Dual N-Channel and Dual P-Channel, POWERTRENCH), GreenBridgetSeries of High-Efficiency Bridge Rectifiers
N-Channel: 100 V, 6 A, 110 m.
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