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FDS4935A Dual P-Channel MOSFET

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Description

MOSFET * Dual, P-Channel, POWERTRENCH 30 V FDS4935A General .
This P. Channel MOSFET is a rugged gate version of onsemi’s advanced POWERTRENCH process.

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Features

* 7 A,
* 30 V. RDS(ON) = 23 mW @ VGS =
* 10 V RDS(ON) = 35 mW @ VGS =
* 4.5 V
* Low Gate Charge (15 nC Typical)
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(ON)
* High Power and Current Handling Capability
* T

Applications

* requiring a wide range of gave drive voltage ratings (4.5 V

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