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FDV301N N-Channel Digital FET

FDV301N Description

Digital FET, N-Channel FDV301N, FDV301N-F169 General .
This N. Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.

FDV301N Features

* 25 V, 0.22 A Continuous, 0.5 A Peak
* RDS(on) = 5 W @ VGS = 2.7 V
* RDS(on) = 4 W @ VGS = 4.5 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
* Replace Multiple NPN Digital Transistors with One DMOS FET

FDV301N Applications

* as a replacement for digital transistors. Since bias resistors are not required, this one N

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N-Channel Digital FET ON Semiconductor
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