FDV301N - N-Channel Digital FET

ON Semiconductor

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Datasheet Details

Part number	FDV301N
Manufacturer	ON Semiconductor
File Size	199.06 KB
Description	N-Channel Digital FET
Datasheet	FDV301N-ONSemiconductor.pdf

FDV301N Product details

Description

This N Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on state resistance. channel FET can replace several different digital transistors, with different bias

Features

25 V, 0.22 A Continuous, 0.5 A Peak.
RDS(on) = 5 W @ VGS = 2.7 V.
RDS(on) = 4 W @ VGS = 4.5 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V.
Replace Multiple NPN Digital Transistors with One DMOS FET.
This Device is Pb.
Free and Halide Free Vcc D OUT IN G S GND Figure 1. Inverter.

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Published: Jul 6, 2019 |