FDV301N

N-Channel Digital FET

ON Semiconductor

FDV301N Features

* 25 V, 0.22 A Continuous, 0.5 A Peak

* RDS(on) = 5 W @ VGS = 2.7 V

* RDS(on) = 4 W @ VGS = 4.5 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V

* Replace Multiple NPN Digital Transistors with One DMOS FET

FDV301N General Description

This N

*Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on

*state resistance. This device has been designed especially for low volt.

FDV301N Datasheet (199.06 KB)