FDV303N - N-Channel Digital FET
These N *Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.
This very high density process is tailored to minimize on *state resistance at low gate drive conditions.
This device is designed especially
FDV303N Features
* 25 V, 0.68 A Continuous, 2 A Peak
* RDS(ON) = 0.45 Ω @ VGS = 4.5 V
* RDS(ON) = 0.6 Ω @ VGS= 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V
* Gate
* Source Zener for ESD Ruggedness, > 6 kV Human B
