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FDV303N N-Channel Digital FET

FDV303N Description

Digital FET, N-Channel FDV303N General .
These N. Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technolog.

FDV303N Features

* 25 V, 0.68 A Continuous, 2 A Peak
* RDS(ON) = 0.45 Ω @ VGS = 4.5 V
* RDS(ON) = 0.6 Ω @ VGS= 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V
* Gate
* Source Zener for ESD Ruggedness, > 6 kV Human B

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N-Channel Digital FET ON Semiconductor
ON Semiconductor FDV303N-like datasheet