FDV303N Datasheet, Fet, ON Semiconductor

FDV303N Features

• Fet
• 25 V, 0.68 A Continuous, 2 A Peak
• RDS(ON) = 0.45 Ω @ VGS = 4.5 V
• RDS(ON) = 0.6 Ω @ VGS= 2.7 V
• Very Low Level Gate Drive Requirements Allowing Dir

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FDV303N

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ON Semiconductor ↗

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📄 Datasheet

Description:

N-channel digital fet. These N

Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell densit

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FDV303N

ON Semiconductor

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