FDV303N

N-Channel Digital FET

ON Semiconductor

FDV303N Features

* 25 V, 0.68 A Continuous, 2 A Peak

* RDS(ON) = 0.45 Ω @ VGS = 4.5 V

* RDS(ON) = 0.6 Ω @ VGS= 2.7 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V

* Gate

* Source Zener for ESD Ruggedness, > 6 kV Human B

FDV303N General Description

These N

*Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on

*state resistance at low gate drive conditions. This device is designed especially.

FDV303N Datasheet (261.90 KB)