FDV303N - N-Channel Digital FET

ON Semiconductor

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Datasheet Details

Part number	FDV303N
Manufacturer	ON Semiconductor
File Size	261.90 KB
Description	N-Channel Digital FET
Datasheet	FDV303N-ONSemiconductor.pdf

FDV303N Product details

Description

These N Channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology.This very high density process is tailored to minimize on state resistance at low gate drive conditions. efficiency miniature discrete DC/DC conversion in compact

Features

25 V, 0.68 A Continuous, 2 A Peak.
RDS(ON) = 0.45 Ω @ VGS = 4.5 V.
RDS(ON) = 0.6 Ω @ VGS= 2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits, VGS(th) < 1 V.
Gate.
Source Zener for ESD Ruggedness, > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant www. onsemi. com SOT.
23.

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Published: Mar 23, 2020 |