FDV304P Datasheet - ON Semiconductor

FDV304P P-Channel Digital FET

This P *Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on *state resistance at low gate drive conditions. This device is designed especially for applica.

FDV304P Features

* 25 V,

* 0.46 A Continuous,

* 1.5 A Peak

* RDS(on) = 1.1 W @ VGS =

* 4.5 V

* RDS(on) = 1.5 W @ VGS =

* 2.7 V

* Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V

* Gate

FDV304P-ONSemiconductor.pdf