FDV304P - P-Channel Digital FET

ON Semiconductor

FDV304P Datasheet Preview — Preview of FDV304P PDF

Datasheet Details

Part number	FDV304P
Manufacturer	ON Semiconductor ↗
File Size	176.80 KB
Description	P-Channel Digital FET
Datasheet	FDV304P-ONSemiconductor.pdf

FDV304P Product details

Description

This P Channel enhancement mode field effect transistors is produced using onsemi’s proprietary, high cell density, DMOS technology.This very high density process is tailored to minimize on state resistance at low gate drive conditions. state resistance even at gate drive voltages as low as 2.5 V.

Features

25 V,.
0.46 A Continuous,.
1.5 A Peak.
RDS(on) = 1.1 W @ VGS =.
4.5 V.
RDS(on) = 1.5 W @ VGS =.
2.7 V.
Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.5 V.
Gate.
Source Zener for ESD Ruggedness. > 6 kV Human Body Model.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free and Halide Free.

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Published: Jan 23, 2023 |