FFSP0865A Silicon Carbide Schottky Diode

ON Semiconductor

Description

FFSP0865A Silicon Carbide Schottky Diode 650 V, 8 A .
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to.

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Datasheet Specifications

Part number: FFSP0865A
Manufacturer: ON Semiconductor ↗
File Size: 138.05 KB
Datasheet: FFSP0865A-ONSemiconductor.pdf
Description: Silicon Carbide Schottky Diode

Features

* Max Junction Temperature 175°C
* Avalanche Rated 49 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery/No Forward Recovery
* These Devices are Pb
* Free, Halogen Free/BFR Free

Applications

* General Purpose
* SMPS, Solar Inverter, UPS
* Power Switching Circuits www. onsemi. com 1. Cathode 2. Anode Schottky Diode 1 2 TO
* 220
* 2LD CASE

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FFSP0865A Silicon Carbide Schottky Diode ON Semiconductor

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