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FFSP10120A Datasheet - ON Semiconductor

Silicon Carbide Schottky Diode

FFSP10120A Features

* Max Junction Temperature 175 °C

* Avalanche Rated 100 mJ

* High Surge Current Capacity

* Positive Temperature Coefficient

* Ease of Paralleling

* No Reverse Recovery / No Forward Recovery Applications

* General Purpose

* SMPS, Solar I

FFSP10120A General Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the.

FFSP10120A Datasheet (228.27 KB)

Preview of FFSP10120A PDF

Datasheet Details

Part number:

FFSP10120A

Manufacturer:

ON Semiconductor ↗

File Size:

228.27 KB

Description:

Silicon carbide schottky diode.

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FFSP10120A Silicon Carbide Schottky Diode ON Semiconductor

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